Find the short-circuit transconductance of the super-source follower shown in Fig. 3.43. Assume I₁ = 200 µA, I₂ = 100 µA, W₁= 30 µm, and W₂= 10 µm. Also, assume that both transistors operate in the active region, and ignore the body effect. Use the transistor parameters in Table 2.4. Assume L_drwn= 0.40 µm and X_d= 0.1 µm for all transistors.

Fig. 3.43:

Table. 2.4

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VDD M1 Vo M2 V; 12 Value Value n-Channel p-Channel Parameter Symbol Transistor Transistor Units Substrate doping Gate oxide thickness 5 x 105 Atoms/cm NA, Np 4 x 106 Гоx 80 80 Metal-silicon work function Фия -0.6 -0.1 cm?/V-s Channel mobility Minimum drawn channel 450 150 Larwn 0.4 0.4 um length Source, drain junction depth Source, drain side diffusion Overlap capacitance per unit gate X) La 0.15 0.18 0.09 0.09 pm 0.35 0.35 fF/um width Threshold adjust implant (box dist) impurity type effective depth effective surface х, 0.16 0.16 Nsi 4 x 1016 3 x 1016 Atoms/cm concentration Nominal threshold voltage Polysilicon gate doping concentration V, Napoly 0.6 100 -0.8 1020 Atoms/cm R, ΩΟ Poly gate sheet resistance Source, drain-bulk junction Cp 0.2 0.4 fF/um? capacitances (zero bias) Source, drain-bulk junction capacitance grading 0.5 0.4 coefficient Source, drain periphery capacitance (zero bias) Source, drain periphery Срно 1.2 2.4 f/um 0.4 0.3 capacitance grading coefficient Source, drain junction built-in potential 0.7 0.7 Os Surface-state density 10" 10" Atoms/cm? Channel-length modulation parameter "XP dVps 0.02 0.04 um/V