1. For a capacitor with area of 1cm, and gate oxide thickness of 1.5 nm the...

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1. For a capacitor with area of 1cm², and gate oxide thickness of 1.5 nm the value of capacitance is 231 micro Farad. For a dielectric with K value of 32, find the value of equivalent oxide thickness. Q.2. For silicon CMOS, the motilities of electrons and holes are given as 1, 400 cm²/V x sec and 400 cm²/V x sec respectively. In order for proper operation of CMOS inverter, the drain current of both NMOS and PMOS are same. Is this also true for the area of two transistors? Provide suitable explanation. 1. For a capacitor with area of 1cm², and gate oxide thickness of 1.5 nm the value of capacitance is 231 micro Farad. For a dielectric with K value of 32, find the value of equivalent oxide thickness. Q.2. For silicon CMOS, the motilities of electrons and holes are given as 1, 400 cm²/V x sec and 400 cm²/V x sec respectively. In order for proper operation of CMOS inverter, the drain current of both NMOS and PMOS are same. Is this also true for the area of two transistors? Provide suitable explanation.

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Q2 For proper CMOS operation with equal drain currents the area ratio of ... View the full answer