Hall coefficient of a specimen of depend silicon found to be 3.66x10-m?/C. The resistivity of the...

 

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Hall coefficient of a specimen of depend silicon found to be 3.66x10-m?/C. The resistivity of the specimen is 8.93x 10-2 m. Find the density of the charge carriers (in electrons/m) and the mobility in (m/V.s). 1.8e22, 0.05 1.8e22, 0.04 1.7e22, 0.05 1.7e22, 0.04 In a p-n junction, Barrier potential is 1 point caused by Diffusion of majority carriers across the junction Migration of minority carriers across the junction Thermally-generated electrons and holes Flow of drift current Hall coefficient of a specimen of depend silicon found to be 3.66x10-m?/C. The resistivity of the specimen is 8.93x 10-2 m. Find the density of the charge carriers (in electrons/m) and the mobility in (m/V.s). 1.8e22, 0.05 1.8e22, 0.04 1.7e22, 0.05 1.7e22, 0.04 In a p-n junction, Barrier potential is 1 point caused by Diffusion of majority carriers across the junction Migration of minority carriers across the junction Thermally-generated electrons and holes Flow of drift current