The aim of this question is to plot the I-V characteristics and analyze an n-type MOSFET....

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The aim of this question is to plot the I-V characteristics and analyze an n-type MOSFET. Two models that should be investigated are: i) Simple long channel model ii) Channel length modulation The VGs of the n-type MOSFETs can be assumed to vary from 1, 2, 3 and 4 V. Other paramaters to be considered are, V₁= 0.25 V, constant mobility, low field mobility, μF = 500 W cm²/V.s, oxide thickness, tox = 4nm, C'ox = 8.6 x 10-7 F/cm², = 5, and channel length L modulation, A = 0.04 V-1. The analyzations should address the followings: i) Find the VDsat at VGs = 2 V for both models ii) Find the saturation current, IDsat at VDsat = 2 V for both models iii) Find the linear current, lo at Vo = 1 V for both models iv) Find the linear current, lo at V₁= 3 V for both models v) Plot the I-V characteristics for simple long channel model vi) Plot the I-V characteristics for channel length modulation model. vii)Analyze the linear current, lo after saturation point for both models. The aim of this question is to plot the I-V characteristics and analyze an n-type MOSFET. Two models that should be investigated are: i) Simple long channel model ii) Channel length modulation The VGs of the n-type MOSFETs can be assumed to vary from 1, 2, 3 and 4 V. Other paramaters to be considered are, V₁= 0.25 V, constant mobility, low field mobility, μF = 500 W cm²/V.s, oxide thickness, tox = 4nm, C'ox = 8.6 x 10-7 F/cm², = 5, and channel length L modulation, A = 0.04 V-1. The analyzations should address the followings: i) Find the VDsat at VGs = 2 V for both models ii) Find the saturation current, IDsat at VDsat = 2 V for both models iii) Find the linear current, lo at Vo = 1 V for both models iv) Find the linear current, lo at V₁= 3 V for both models v) Plot the I-V characteristics for simple long channel model vi) Plot the I-V characteristics for channel length modulation model. vii)Analyze the linear current, lo after saturation point for both models.

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Here are the calculations and plots for the ntype MOSFET IV characteristics for the given long channel and channel length modulation models Given para... View the full answer