Version 4 SHEET 1 880 680 WIRE 160 0 96 0 WIRE 288 0 240 0 WIRE 336 0 288 0 WIRE 448 0 400 0 WIRE 96 48 96 0 WIRE 288 48 288 0 WIRE 448 48 448 0 WIRE 96 160 96 128 WIRE 256 160 96 160 WIRE 288 160 288 128 WIRE 288 160 256 160 WIRE 448 160 448 128 WIRE 448 160 288 160 WIRE 256 192 256 160 FLAG 256 192 0 SYMBOL Misc\\signal 96 32 R0 WINDOW 3 -51 174 Left 2 SYMATTR InstName V1 SYMATTR Value SINE(0 10 10K) SYMBOL res 144 16 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 0 56 VBottom 2 SYMATTR InstName R1 SYMATTR Value 10 SYMBOL res 432 32 R0 SYMATTR InstName R2 SYMATTR Value 100 SYMBOL ind 272 32 R0 SYMATTR InstName L1 SYMATTR Value 220 SYMBOL cap 336 16 R270 WINDOW 0 32 32 VTop 2 WINDOW 3 0 32 VBottom 2 SYMATTR InstName C1 SYMATTR Value 50 TEXT 44 226 Left 2 !.tran 1ms

Create a C++ program to simulate the circuit with the given parameters. The program should: Use the Modified Nodal Analysis matrix stamping method Apply device stamps in separate functions (such as void StampR(...)) Produce output (via console, plot, or file) for the following time series data t (Time in seconds) v _3 (t) (R _2 voltage in volts) I _L(t) (L1 current in Amperes) implement the Capacitor and Inductor stamps using the trapezoidal method. Create a C++ program to simulate the circuit with the given parameters. The program should: Use the Modified Nodal Analysis matrix stamping method Apply device stamps in separate functions (such as void StampR(...)) Produce output (via console, plot, or file) for the following time series data t (Time in seconds) v _3 (t) (R _2 voltage in volts) I _L(t) (L1 current in Amperes) implement the Capacitor and Inductor stamps using the trapezoidal method