Question: An engineer at a semiconductor company wants to model the relationship between the device gain and hFE(y) and three parameters: emitter-RS (x 1 ), base-RS
An engineer at a semiconductor company wants to model the relationship between the device gain and hFE(y) and three parameters: emitter-RS (x1), base-RS (x2), and emitter-to-base-RS (x3). The data are shown below:
(a) Fit a multiple linear regression to the data.
(b) Predict hFE when x1 = 14, x 2 = 220, and x3 = 5 [Data from Myers and Montgomery (2002)]

21, Emitter-RS cBase-RS E-B-RS hFE-IM-5V 14.62 I2, D3, 226.0 7.000 3.375 6.375 6.000 7.625 6.000 3.375 6.125 5.000 6.625 5.750 3.750 128.40 15.63 14.62 15.00 14.50 15.25 16.12 15.13 15.50 15.13 15.50 16.12 15.13 15.63 52.62 113.90 98.01 139.90 102.60 48.14 109.60 82.68 112.60 97.52 59.06 111,80 89.09 220.0 217.4 220.0 226.5 224.1 220.5 223.5 217.6 228.5 230.2 226.5 226.6 225.6 6.125 5.375 S.875 4.000 15.38 171.90 66.80 234.0 230.0 15.50 22, y, Emitter-RS Base-RS E-B-RS hFE-IM-5V 157.10 208.40 133.40 8.000 10.870 14.25 224.3 240.5 223.7 14.50 14.62 7.375
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