For an ideal p-n-junction rectifier with a sharp boundary between its two semiconducting sides, the current I is related to the potential difference V across the rectifier by I = I₀ (e^eV/KT = 1), where I₀, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference V is positive if the rectifier is forward-biased and negative if it is back-biased. 

(a) Verify that this expression predicts the behavior of a junction rectifier by graphing I versus V from – 0.12 V to + 0.12 V. Take T = 300 K and I₀: 5.0nA. 

(b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.