One integrated circuit design calls for the diffusion of aluminum into silicon wafers; the background concentration of Al in Si is 1.75 ( 1019 atoms/m3. The pre-deposition heat treatment is to be conducted at 975(C for 1.25 h, with a constant surface concentration of 4 ( 1026 Al atoms/m3. At a drive-in treatment temperature of 1050(C, determine the diffusion time required for a junction depth of 1.75 (m. For this system, values of Qd and D0 are 3.41 eV/atom and 1.38 ( 10(4 m2/s, respectively?