A plasma etcher has a yield of good chips that is influenced by pressure (X1) and gas

Question:

A plasma etcher has a yield of good chips that is influenced by pressure (X1) and gas flow rate X2). Both X1 and X2 arc scaled variables (0 ? Xi ? 2). A model has been developed based on operating data as follows:imageUse Excel to maximize yield Y, using starting points of (1,1) and (0,0).

Fantastic news! We've Found the answer you've been seeking!

Step by Step Answer:

Related Book For  book-img-for-question

Process Dynamics And Control

ISBN: 978-0471000778

2nd Edition

Authors: Dale E. Seborg, Thomas F. Edgar, Duncan A. Mellich

Question Posted: