Question: A silicon-based MOSFET has a square gate 0.50m on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20m

A silicon-based MOSFET has a square gate 0.50μm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20μm thick and has a dielectric constant of 4.5.
(a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)?
(b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 1.0 V?

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