A silicon-based MOSFET has a square gate 0.50m on edge. The insulating silicon oxide layer that separates
Question:
(a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)?
(b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 1.0 V?
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Related Book For
Probability & Statistics For Engineers & Scientists
ISBN: 9780130415295
7th Edition
Authors: Ronald E. Walpole, Raymond H. Myers, Sharon L. Myers, Keying
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