An article in the IEEE Transactions on Electron Devices (November 1986, p 1754) described a study on the effects of two variablespolysilicon doping and anneal conditions (time and temperature)on the base current of a bipolar transistor The data from this experiment follow (a) Is there any evidence to support the claim that either polysilicon doping level or anneal conditions affect base current Do these variables interact Use Icirc plusmn 0 05 (b) Graphically analyze the interaction (c) Analyze the residuals from this experiment (d) Use Fishers LSD method to isolate the effects of anneal conditions on base current, with Icirc plusmn 0 05 Anneal (temperature time) 900 900 950 1000 1000 60 180 60 15 30 4 40 8 30 10 15 10 29 11 01 4 60 8 90 10 20 10 30 10 58 10 19 10 81 Polysilicon 1x100 doping 9 38 2 x 1020 3 20 7 81 3 50 7 75 10 02 10 10 10 60

Question: An article in the IEEE Transactions on Electron Devices (November 1986, p. 1754) described a study on the effects of two variablespolysilicon doping and anneal

An article in the IEEE Transactions on Electron Devices (November 1986, p. 1754) described a study on the effects of two variables€”polysilicon doping and anneal conditions (time and temperature)€”on the base current of a bipolar transistor. The data from this experiment follow.

(a) Is there any evidence to support the claim that either polysilicon doping level or anneal conditions affect base current? Do these variables interact? Use Î± = 0.05.

(b) Graphically analyze the interaction.

(d) Use Fisher€™s LSD method to isolate the effects of anneal conditions on base current, with Î± = 0.05.

Anneal (temperature/time) 900 900 950 1000 1000 60 180 60 15 30 4.40 8.30 10.15 10.29 11.01 4.60 8.90 10.20 | 10.30 | 10

Anneal (temperature/time) 900 900 950 1000 1000 60 180 60 15 30 4.40 8.30 10.15 10.29 11.01 4.60 8.90 10.20 | 10.30 | 10.58 10.19 | 10.81 Polysilicon 1x100 doping 9.38 2 x 1020 |3.20 7.81 3.50 7.75 10.02 10.10 10.60

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