Question: Use any of the programming tools Matlab/Python or Excel/Origin to plot and compare for the design space analysis. For the given parameters ebox =

Use any of the programming tools Matlab/Python or Excel/Origin to plot and compare for the design space analysis. For the given parameters ebox = 4, etox = 8, Critical Blocking and Tunnel oxide thickness for leakage is 10mm; Stored charge = 2 * 1012 C cm2 o Stored charge should not cross 0.25V to avoid Stored charge related potential rise and leakage Critical E-field for programming is 5 * 105 V/cm, Assume critical Floating gate voltage for programming 2.5V . Voltage coupling ratio i.e. Vtox Vbox > 0.5 for efficient voltage transfer to tunneling oxide. 1. List out all the conditions that need to be considered for designing a Flash memory (2 points) 2. Draw a band diagram for each case separately. Use pen and paper to draw band diagram. (Do not add images used from any software) (3 points) 3. List out all the above conditions in the mathematical form relating the Blocking and tunnel oxide capacitance. (Describe the range i.e. high or low) (3 points) 4. Hand draw all the conditions on the same figure. Mark the design space. (2 points) 5. Plotting in software and comparing: a. Use any tool as mentioned above and plot all the conditions. Mark the design space. (2 points) b. Does design space improve if critical blocking oxide restriction change to i. 12nm ii. Snm Describe the changes observed in 1 statement. After what range design space vanishes. (4 points) c. Does design space improve if critical blocking oxide restriction change to i. 12mm ii. Snm Describe the changes observed in 1 statement. After what range design space vanishes. (4 points) d. Does design space improve if critical voltage for the stored charge changes to i. 0.2V ii. 0.3V e. Does design space improve voltage coupling ratio change to 1. 0.55 11. 0.45 Describe the changes observed in 1 statement. After what range design space vanishes? (4 points) f. Does the programming condition matter in the design space for the above given conditions? Change the critical E-field value for programming and mention after what value of critical field the design space starts to reduce. (2 points)
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1 List out all the conditions that need to be considered for designing a Flash memory 2 points Blocking oxide thickness Must be greater than 10 nm to prevent leakage Tunnel oxide thickness Must be les... View full answer
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