a. Using the approximate characteristics for the Si diode, determine V D , I D , and

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a. Using the approximate characteristics for the Si diode, determine V_D, I_D, and VR for the circuit of Fig. 2.154.

b. Perform the same analysis as part (a) using the ideal model for the diode.

c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions?

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Electronic Devices And Circuit Theory

ISBN: 9781292025636

11th Edition

Authors: Robert Boylestad, Louis Nashelsky

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Question Posted: Apr 03, 2022 11:54 PM

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a. Using the approximate characteristics for the Si diode, determine V D , I D , and

Question:

Si To Si + R20.2 kn Vg 30 V 1.5 kn Vg 6 V FIG. 2.153 FIG. 2.154 Problems 2 and 3. Problem 4. +

Step by Step Answer:

C So from result obtained in part a ...View the full answer

Electronic Devices And Circuit Theory

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