Jmax A 650-V, 50-A SIC-MOSFET with the maximum junction temperature of T = 200C is part...

 

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Jmax A 650-V, 50-A SIC-MOSFET with the maximum junction temperature of T = 200°C is part of a switching circuit in which the MOSFET must conduct 30 A and block 450 V at 10 kHz and 50% duty cycle. If the MOSFET has on-resistance of Rps(on) = 50 m2, the junction-case thermal resistance of Rth JC = 0.5°C/W, and the switching energy loss during the on- and off-states are Eon = 300 µJ and Eoff = 100 µJ in this circuit at the ambient temperature of T₁ = 25°C, determine if the MOSFET is thermally overstressed. Jmax A 650-V, 50-A SIC-MOSFET with the maximum junction temperature of T = 200°C is part of a switching circuit in which the MOSFET must conduct 30 A and block 450 V at 10 kHz and 50% duty cycle. If the MOSFET has on-resistance of Rps(on) = 50 m2, the junction-case thermal resistance of Rth JC = 0.5°C/W, and the switching energy loss during the on- and off-states are Eon = 300 µJ and Eoff = 100 µJ in this circuit at the ambient temperature of T₁ = 25°C, determine if the MOSFET is thermally overstressed.

Answer rating: 100% (QA)

Solution To determine if the SiCMOSFET is thermally overstressed we need to calculate the junction t... View the full answer