In an RBS measurement setup, 4He+ at E₀ = 2 MeV is used as incident ions. The scattering angle, θ, is 170^o. The incident ions impinge on a 100 nm thick silicon sample (atomic mass of Si equals 28.08). The majority of He ions penetrate below the surface where they lose their energy at a linear rate of 2 keV/nm. Determine the range of the backscattered energies from the sample (ΔE = E₄ - E₁).

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E-2 MeV E,