A silicon wafer with thickness of 925 mm is being heated with a uniform heat flux at

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A silicon wafer with thickness of 925 mm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as k(T) = (a + bT + cT2) W/m·K, where a = 437, b = -1.29, and c = 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 2°C. If the upper surface of the silicon wafer is at a uniform temperature of 600 K, determine the maximum allowable heat flux.

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