A silicon sample at T = 300 K is n type with N _d = 5 x 10 ¹⁶ cm ^-3 and N _a = 0. The sample has a length of 0.1 cm and a cross-sectional area of 10 ^-4 cm. A voltage of 5 V is applied between the ends of the sample. For t < 0. The sample has been illuminated with light, producing an excess-carrier generation rate of g' = 5 x 10 ²¹ cm ^-3 s ^-1 uniformly throughout the entire silicon. The minority carrier lifetime is r _po = 3 x 10 ^-2 s. At r = 0. the light is turned off. Derive the expression for die current in the sample as a function of timer > 0. (Neglect surface effects.)

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