Consider, as shown in Figure, a uniformly doped silicon pn junction at T = 300 K with
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Consider, as shown in Figure, a uniformly doped silicon pn junction at T = 300 K with impurity doping concentrations of N a = N d = 5 x 10 15 cm -3 and minority carrier lifetimes of T n0 = T p0 = T O = 10-7 S. A reverse-biased voltage of VR = 10 V is applied. A light source is incident only on the space charge region, producing an excess carrier generation rate of g' = 4 x 10 19 cm -3 s-1. Calculate the generation current density.
Related Book For
College Physics
ISBN: 978-0495113690
7th Edition
Authors: Raymond A. Serway, Jerry S. Faughn, Chris Vuille, Charles A. Bennett
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