a) A photodetector made with a Cs3Bi semiconductor features a low work function of 0.50 eV....

 

Transcribed Image Text:

a) A photodetector made with a Cs3Bi semiconductor features a low work function of 0.50 eV. Determine the velocity of photoelectrons produced when this material is exposed to a monochromatic beam of infrared radiation with a wavelength of 3000 cm-1. (1eV = 1.602 x 10-19 J) velocity = b) Would this detector be suitable for use in a near-infrared spectrometer that uses a light source operating over a wavelength range from 850 – 2000 nm? Explain your answer. circle one: yes no a) A photodetector made with a Cs3Bi semiconductor features a low work function of 0.50 eV. Determine the velocity of photoelectrons produced when this material is exposed to a monochromatic beam of infrared radiation with a wavelength of 3000 cm-1. (1eV = 1.602 x 10-19 J) velocity = b) Would this detector be suitable for use in a near-infrared spectrometer that uses a light source operating over a wavelength range from 850 – 2000 nm? Explain your answer. circle one: yes no

Answer rating: 100% (QA)

Saletion GivenaiLon cwork Funetion of 050eN 3000 C 3D 19 37 Port Pomula W hyo a he Whvo 050 34 661... View the full answer