$1.$ For the following material parameters, estimate: $(1)$ which version of the saturation current you should use $($e$.$g$.,$ wide base, narrow base, or generalized$)$; and $(2)$ if you would expect the electron or hole diffusion current to be larger $($or if they are the same$).$ The pn junction is made from silicon, with ni $=11010$ cm$-3$ and EG $($at $300$K$)=1\mathrm{.}12$ eV$.$ You don$$t need to calculate each case, look at the magnitudes of the parameters.

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N$-$type material parameters

ND $=11016$ cm$-3$ ; Dp $=15$ cm$^2/$s; Thickness $=20$m; tp $=1000$ ms; S $=1103$ cm$/$sec

P$-$type material parameters

NA $=51018$ cm$-3$ ; Dn $=40$ cm$^2/$s; Thickness $=200$m; tn $=100$ ms; S $=10$ cm$/$sec