Question: 1. Phosphorus is diffused at 1150C into a uniformly doped p-silicon substrate with acceptor concentration of NA=1016/cm3. Given that the solid solubility and the diffusion

 1. Phosphorus is diffused at 1150C into a uniformly doped p-silicon

1. Phosphorus is diffused at 1150C into a uniformly doped p-silicon substrate with acceptor concentration of NA=1016/cm3. Given that the solid solubility and the diffusion co-efficient of phosphorus in silicon at 1150C is 1020/cm3 and 1012cm2/s respectively, (a) Calculate the total number of phosphorus atoms/area in silicon after a predeposition time of 1 hour. (b) If after this step, drive-in is carried out for 2 hours at the same temperature, what will be the final junction depth and (c) the surface concentration

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