Question: 1: The MOSFET as a Resistor Consider an n -poly-Si-gated long-channel n-MOSFET with W/L = 10, effective gate- oxide thickness Toxe = 2 nm, and

1: The MOSFET as a Resistor Consider an n -poly-Si-gated long-channel n-MOSFET with W/L = 10, effective gate- oxide thickness Toxe = 2 nm, and substrate (body) dopant concentration NA = 1018 cm-3: (a) Calculate the gate-to-source voltage VGS required for the MOSFET to present a resistance of 1 k between the source and drain at low values of VDS. (Hint: You will need to solve this problem iteratively when you consider the dependence of effective mobility eff on the effective vertical electric field. An estimation to the accuracy of 0.1 V is good enough.) (b) What is the inversion-layer electr

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