1. We know the basic operating principles of a MOSFET. In practice, however, transistors may not always function under the ideal scenario. One commonly occurring issue is the non-negligible contact resistance (Rc) between the channel and the S/D electrodes. Under large Rc, the transfer curve would be significantly distorted with a low on-current of the transistor. To subtract the impact of Rc, the typical method is to vary the length of the transistor and measure IDs under the condition of VDS