$2\mathrm{.}1)$ When temperature of a deeply scaled CMOS circuit is increased, then

$1)$ the carrier mobility of the CMOS device will be

a$)$ increased b$)$ decreased c$)$ not changed

$2)$ the threshold voltage of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed

$3)$ the sub$-$threshold leakage current of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed

$4)$ the depletion region of the CMOS device will be

a$)$ increased b$)$ decreased c$)$ not changed

$5)$ the junction capacitance of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed

$6)$ the junction leakage current of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed

$7)$ the active mode current $($on$-$current$)$ of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed

$8)$ the standby mode current $($off$-$current$)$ of the CMOS circuit will be

a$)$ increased b$)$ decreased c$)$ not changed