Question: 2 . An n - type Si sample is doped at 1 0 1 5 cm - 3 . We shine light on it to

2. An n-type Si sample is doped at 1015 cm-3. We shine light on it to create electron-hole pairs at 1019 cm-3/s. What is the steady state concentration of minority carriers, if the lifetime is 100 ns? How long does it take for the hole concentration to drop 10%, after the light is switched off? How long for the hole concentration to reach a value that is 10% higher than the thermal equilibrium value?

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