Question: 2 Problem 1.5 For polysilicon deposition by CVD at 1,000C with a concentration of Si atoms in the gas stream being 4 x 1016/cm, calculate

2 Problem 1.5 For polysilicon deposition by CVD at 1,000C with

2 Problem 1.5 For polysilicon deposition by CVD at 1,000C with a concentration of Si atoms in the gas stream being 4 x 1016/cm, calculate the percentage change in growth rate if the deposition temperature changes by 1%, when the polysilicon is deposited at a surface-reaction-limited growth of 1.5 um/min. Assume that the surface-reaction rate coefficient k, is given by ks = 10'exp(-Ez/kT) cm/sec. S = a

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