$2.$ Semiconductor Devices $(16$ Points$)$

An ideal silicon pnp BJT has the emitter junction properties shown in the table below at $300$ K $.$ Take note of the units used in this problem.

a$.$ Find the values for the minority carrier concentrations on the p$-$side and on the nside respectively.

b$.$ Find the values for the electron and the hole diffusion lengths.

c$.$ If the electron diffusion length is $\backslash (2\mathrm{.}6\backslash$times $10^\{-3\}\backslash$mathrm$\{$~cm$\}\backslash )$ and the hole diffusion length is $2\mathrm{.}9\backslash (\backslash$times $10^\{-3\}\backslash$mathrm$\{$~cm$\}\backslash ),$ find the ratio of the hole current to the electron current in the emitter junction.

d$.$ Assume the ratio in part c above is $100.$ Explain why you would consider this to be a "good" or a "poor" BJT$.$