$3\mathrm{.}1\mathrm{.}17$ In a p$+-$n junction diode under forward bias a$)$ the diode current is dominated by electron diffusion

b$)$ diode capacitance is mostly determined by the junction $($depletion$)$ capacitance $x$

c$)$ the voltage drop on the diode decreases with increasing temperature $x$

d$)$ the diode current does not depend on the doping density in the $n-$side

e$)$none of the above