$3-$ For the JFET of Prob. $2,$ plot lD vs$.V_D$ for the same four values of $V_G.$ Terminate each plot at the point of saturation.

$1-$ Assume the JFET shown in Fig. below is Si and has $p^{+}$regions doped with ${10}^{18}$ acceptors $\frac{?}{c{m}^3}$ and a channel with ${10}^{16}$ donors$/$cm$3.$ If the channel half width a is $1m,$ compare $V_P$ with $V_0.$ What voltage $V_{GD}$ is required to cause pinch$-$off when $V_0$ is included? With $V_G=-3V,$ at what value of $V_D$ does the current saturate?

$2-$ If the ratio $\frac{Z}{L}=10$ for the JFET of Prob$\mathrm{.}1,$ and ${}_n=1000c\frac{m^2}{V}-$s$,$ calculate sat.$)$ for $V_G=0,-2,-4,$ and $-6$ V $.$ Plot sat.$)$ vs$.V_D($sat$.).$

$3-$ For the JFET of Prob. $2,$ plot lDVs$.V_D$ for the same four values of $V_G.$ Terminate each plot at the point of saturation.