3. Repeat the last Example for the case when the difference between the Boltzmann approximation and the Fermi-Dirac function is 2 percent of the Fermi function. Intrinsic Carrier Concentration Example 1 Calculate the position of the intrinsic Fermi level with respect to the center of the band gap in silicon at T=300K. The density of states effective carrier masses in silicon are mn=1.08mo and mp=0.56mo. Solution: The intrinsic Fermi level with respect to the center of the bandgap is EFiEmidgap=43kTln(mnmp)=43(0.0259)ln(1.080.56)=12.8meV The intrinsic Fermi level in silicon is 12.8meV below the mid gap energy. If we compare 12.8meV to 560meV, which is one-half of the band gap energy of silicon, we can, in many applications, simply approximate the intrinsic Fermi level to be in the center of the band gap. low transcribed data