Question: . 4 . Compare EUV, E - beam, Ion Beam and X - ray Lithography techniques in terms of principle of operation, resolution ( minimum

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4. Compare EUV, E-beam, Ion Beam and X-ray Lithography techniques in terms of principle of operation, resolution (minimum feature size), Aspect Ratio and cost. Which technique do you use for building a high aspect ratio structure with minimum feature size. Justify your answer with basis. Provide appropriate references

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