4. Consider a bar of silicon in which a hole concentration profile described by p(x) =...

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4. Consider a bar of silicon in which a hole concentration profile described by p(x) = po e*Lp is established. Find the hole-current density at x = If the cross-sectional area of the bar is 100 µm², find the current Ip. 0. Let po = 1016/cm³, Lp = 1 µm, and Dp = 12 cm?/s. 5. Given the information appearing in Fig. 2, determine: (a) Ic. (b) VE. (c) Vcc. (d) VCE. (е) Vв. (f) R1. 2.7 ka o 106 V 20LA VE 3= 100 o VE 8.2 ka 1.2 k2 Fig. 2 4. Consider a bar of silicon in which a hole concentration profile described by p(x) = po e*Lp is established. Find the hole-current density at x = If the cross-sectional area of the bar is 100 µm², find the current Ip. 0. Let po = 1016/cm³, Lp = 1 µm, and Dp = 12 cm?/s. 5. Given the information appearing in Fig. 2, determine: (a) Ic. (b) VE. (c) Vcc. (d) VCE. (е) Vв. (f) R1. 2.7 ka o 106 V 20LA VE 3= 100 o VE 8.2 ka 1.2 k2 Fig. 2

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4 5 qDpe The expression for the holecurrent density ... View the full answer