Question: 4 . Fermi Dirac Statistics ( 1 6 Points ) Ge is doped with phosphorous, an n - type impurity, that produces an donor energy

4. Fermi Dirac Statistics (16 Points)
Ge is doped with phosphorous, an n-type impurity, that produces an donor energy level, \(\mathrm{E}_{\mathrm{d}}\), located 0.012 eV below the conduction band edge, \(\mathrm{E}_{\mathrm{c}}\). The bandgap energy, \(\mathrm{E}_{\mathrm{g}}\), for Ge is 0.68 eV and its Fermi level, \(\mathrm{E}_{\mathrm{f}}\), is located 0.2 eV above its intrinsic level for the doping level present. Assume the temperature is 300 K .
a. Sketch an energy band diagram for this Ge material. Label the conduction band edge, \(\mathrm{E}_{\mathrm{C}}\), the valence band edge, \(\mathrm{E}_{\mathrm{V}}\), the Fermi level, \(\mathrm{E}_{\mathrm{F}}\), the intrinsic Fermi level, \(\mathrm{E}_{\mathrm{i}}\), and the donor energy level, \(\mathrm{E}_{\mathrm{d}}\), showing numerical values for them as appropriate.
b. If the difference between the Fermi level and the donor energy level is 0.128 eV , use the Fermi Dirac statistics to calculate the probability of finding an electron at \(\mathrm{E}_{\mathrm{d}}\).
c. If the difference between the Fermi level and the conduction band edge is 0.140 eV , use the Fermi Dirac statistics to calculate the probability of finding an electron at \(\mathrm{E}_{\mathrm{c}}\).
d. The probability calculated in part b above should be VERY small. Explain why the Fermi-Dirac calculation produces such a small probability of finding an electron at \(\mathrm{E}_{\mathrm{d}}\) and the physical significance of that small probability.
4 . Fermi Dirac Statistics ( 1 6 Points ) Ge is

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