Question: 4 . Fermi Dirac Statistics ( 1 6 Points ) Ge is doped with phosphorous, an n - type impurity, that produces an donor energy
Fermi Dirac Statistics Points
Ge is doped with phosphorous, an ntype impurity, that produces an donor energy level, mathrmEmathrmd located eV below the conduction band edge, mathrmEmathrmc The bandgap energy, mathrmEmathrmg for Ge is eV and its Fermi level, mathrmEmathrmf is located eV above its intrinsic level for the doping level present. Assume the temperature is K
a Sketch an energy band diagram for this Ge material. Label the conduction band edge, mathrmEmathrmC the valence band edge, mathrmEmathrmV the Fermi level, mathrmEmathrmF the intrinsic Fermi level, mathrmEmathrmi and the donor energy level, mathrmEmathrmd showing numerical values for them as appropriate.
b If the difference between the Fermi level and the donor energy level is eV use the Fermi Dirac statistics to calculate the probability of finding an electron at mathrmEmathrmd
c If the difference between the Fermi level and the conduction band edge is eV use the Fermi Dirac statistics to calculate the probability of finding an electron at mathrmEmathrmc
d The probability calculated in part b above should be VERY small. Explain why the FermiDirac calculation produces such a small probability of finding an electron at mathrmEmathrmd and the physical significance of that small probability.
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