4. Fill in the blanks [10 pts] Using the following list of words, fill in the...

 

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4. Fill in the blanks [10 pts] Using the following list of words, fill in the missing words from the sentences below. Words may be used more than once or never used. Ductility Semiconductors Toughness Diamond cubic Face centered cubic Arrhenius plot Hexagonal close packed Solid solution hardening State variable Liquidus line Slip direction van der Waals Vacancy migration Activation energy Screw dislocation Young's modulus Ultimate tensile strength Slip plane Hardness Yield strength Solidus line Crystal structure Precipitate hardening Covalent Grain boundary Interstitialcy Slip system Work hardening Edge dislocation Component Zinc blende Grain boundary strengthening (a) A(n) is a type of point defect involving an extra atom placed within a void between existing atoms in a crystalline lattice. (b) A(n) is the energy barrier that must be overcome in a thermally activated process to move from the initial to the final state in a process path. (c) A(n) is a line defect which involves an extra half plane of atoms in a crystalline lattice. (d) are elements or molecules/compounds which are mixed together in a phase diagram. (e) is defined as the area under a stress-strain curve. (f) is a line on a phase diagram above which a single liquid phase will be present. (g) A(n) is a degree of freedom that be changed in a phase diagram and can include temperature, pressure, and composition. (h) A(n) involves plotting the x-axis as 1/Temperature and the y-axis as In (reaction rate) or the reaction rate on a log scale. (i) The two main diffusion mechanisms in crystalline materials are the and mechanisms. 4. Fill in the blanks [10 pts] Using the following list of words, fill in the missing words from the sentences below. Words may be used more than once or never used. Ductility Semiconductors Toughness Diamond cubic Face centered cubic Arrhenius plot Hexagonal close packed Solid solution hardening State variable Liquidus line Slip direction van der Waals Vacancy migration Activation energy Screw dislocation Young's modulus Ultimate tensile strength Slip plane Hardness Yield strength Solidus line Crystal structure Precipitate hardening Covalent Grain boundary Interstitialcy Slip system Work hardening Edge dislocation Component Zinc blende Grain boundary strengthening (a) A(n) is a type of point defect involving an extra atom placed within a void between existing atoms in a crystalline lattice. (b) A(n) is the energy barrier that must be overcome in a thermally activated process to move from the initial to the final state in a process path. (c) A(n) is a line defect which involves an extra half plane of atoms in a crystalline lattice. (d) are elements or molecules/compounds which are mixed together in a phase diagram. (e) is defined as the area under a stress-strain curve. (f) is a line on a phase diagram above which a single liquid phase will be present. (g) A(n) is a degree of freedom that be changed in a phase diagram and can include temperature, pressure, and composition. (h) A(n) involves plotting the x-axis as 1/Temperature and the y-axis as In (reaction rate) or the reaction rate on a log scale. (i) The two main diffusion mechanisms in crystalline materials are the and mechanisms.

Answer rating: 100% (QA)

Answer a Interstitialcy Description In this type of defect an extra atom is present in the matrix of existing atoms The extra atom can be of the same ... View the full answer