$4-$ Use Eqs. $(6-9)$ and $(6-10)$ to calculate and plot $I_D(V_D,V_G)$ at $300$ K for a Si JFET with $a=1000,N_d=7**{10}^{17}c{m}^{-3},Z=100m,$ and $L=5mm.$ Allow $V_D$ to range from $0$ to $5$ V $,$ and allow $V_G$ to take on the values $0,1,-2,-3,-4,$ and $-5$ V $.$

$I_D=G_0{V}_P[\frac{V_D}{V_P}+\frac{2}{3}(-\frac{V_G}{V_P}{)}^{\frac{3}{2}}-\frac{2}{3}(\frac{V_D-V_G}{V_P}{)}^{\frac{3}{2}}]$

$I_D(sat.)=G_0{V}_P[\frac{V_D}{V_P}+\frac{2}{3}(-\frac{V_G}{V_P}{)}^{\frac{3}{2}}-\frac{2}{3}]$

$=G_0{V}_P[\frac{V_G}{V_P}+\frac{2}{3}(-\frac{V_G}{V_P}{)}^{\frac{3}{2}}+\frac{1}{3}]$