$(5$ points$)$ To make NPN Bipolar Junction Transistors, some of the SiC wafers are processed further $($after the P$-$type implantation$).$ For this purpose an n$-$type uniform ion implantation with a depth of $3$m is performed on the wafers. Do you propose this new implant region to be the collector or the emitter of the transistor? Why? What doping concentration range do you propose to achieve a high quality BJT$?$