$6($a$)$ Interpret the nomenclature and structural differences between the two fundamental types of BJT transistors. Illustrate the complex construction of each, precisely labeling the distinct minority and majority carriers within and explain transitioning from a silicon to a germanium base alters any fundamental aspects of their carrier behavior?

$($b$)$ Suppose you have access to only two diodes and are required to construct a transistor$-$like circuit for amplification purposes. Outline the process you would undertake to achieve this objective.

$($c$)$ Choose the characteristics of Fig. $1$ and determine the resulting collector current if IE is $3$ mA and VCB is $10$ V and if VCB reduced to $2$ V then what will be your observation towards IE$.$