Question: 8 . Consider a Si , , GeJSi HBT with x = 1 0 % in the base region ( and 0 % in emitter
Consider a SiGeJSi HBT with x in the base region and in emitter and col
lector region The bandgap of the base region is smaller than that of Si If the base
current is due to emitter injection efficiency only, what is the expected change in the
commonemitter current gain between and C
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