Question: 8 . Consider a Si , , GeJSi HBT with x = 1 0 % in the base region ( and 0 % in emitter

8. Consider a Si,,GeJSi HBT with x =10% in the base region (and 0% in emitter and col-
lector region). The bandgap of the base region is 9.8% smaller than that of Si. If the base
current is due to emitter injection efficiency only, what is the expected change in the
common-emitter current gain between 0' and 100C?

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