Question: A 1 cm x 1 cm square pattern was to be formed in the center of a silicon wafer using positive photoresist ( PR )

1

cm x

1

cm square pattern was to be formed in the center of a silicon wafer using positive photoresist

(

) .

After development, residual PR was observed on the wafer surface within the pattern. Assuming that the exposure time and energy were correctly executed, describe and hypothesize various reasons why the residual PR might remain.

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