Question: ( a ) A Si p + - n junction 1 0 - 2 cm 2 in area has Nd = 1 0 1 5

(a) A Si p+-n junction 10-2 cm2 in area has Nd =1015 cm-3 doping on the n side. Calculate the junction capacitance with a reverse bias of 10 V.(b) An abrupt p+-n junction is formed in Si with a donor doping of Nd =1015 cm-3. What is the depletion region thickness W just prior to ava lanche breakdown?

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