A$.ATi{O}_2$ semiconductor at temperatures greater than $1000C$ has doubly charged, oxygen vacancies. Your engineering colleague argues strongly that these oxygen ionic defects convert the rutile lattice into a p$-$type semiconductor $-$ is he correct and give your reasoning.

B$.$ Is the semiconductor n$-$type or p$-$type, if $L{i}_{2}O$ is added to the $Ti{O}_2$ lattice and give your reasoning