Question: (a) Draw a schematic diagram that shows how dislocation glides. (b) In order to use intrinsic gettering method, certain range of oxygen concentration in the

 (a) Draw a schematic diagram that shows how dislocation glides. (b)

(a) Draw a schematic diagram that shows how dislocation glides. (b) In order to use intrinsic gettering" method, certain range of oxygen concentration in the silicon wafer is needed. What are the minimum and maximum oxygen concentrations? (c) Briefly explain what Wolff rearrangement is. (d) The following graph shows properties of three photoresists (PRs). Are these PRs positive PRs or negative PRs? Which PR is the most sensitive PR? Which PR shows highest contrast? Normalized film thickness 1 Log D

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