Question: A metal - oxide - semiconductor structure is formed using a metal with a work function of 4 . 2 ( eV ) , an

A metal-oxide-semiconductor structure is formed using a metal with a work function of 4.2(eV), an insulator of silicon dioxide that is 300() thick, and a p-type silicon substrate with a doping level of 1015(cm-3).
What is the threshold voltage, VT, for this structure?
Calculate the maximum depletion width for this structure.

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