Question: A narrow base provides greater dc current gain. We make the base too narrow, when reverse bias on the collector - base junction increases, the
A narrow base provides greater dc current gain. We make the base too narrow, when reverse
bias on the collectorbase junction increases, the depletion regions inside the base will touch, and emitter
is shorted to the collector. Which will correctly explain this phenomenon?
Bandgap narrowing.
Auger recombination
Punch trough
Electron mobility increasing
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