A researcher was employed molecular-beam epitaxy technique to grow various binary crystals AB in the laboratory. He found the fluxes of deposited components A and B are to be equal: R_A=R_B.

If the rate of crystal growth is characterized by the flux density, R, of atoms, constituting the growing film. Determine the growth time for a GaP film of thickness 110 nm at R = 10¹⁵ atom cm^-2 s^-1, (Density GaP = 4.138 g cm^-3).