A sample of silicon is doped with donors to a concentration of 10 20 donor m -3
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Question:
A sample of silicon is doped with donors to a concentration of 10 20 donor m -3 . Assume all the donors are ionized and that the sample is initially at 300k.
(a) What is the concentration of holes in this sample of silicon?
(b) Calculate the position of the Fermi level in this doped sample of silicon.
(c) At what temperatures will the intrinsic electron concentration become larger than the donor electron concentration?
Related Book For
Probability & Statistics for Engineers & Scientists
ISBN: 978-0130415295
7th Edition
Authors: Ronald E. Walpole, Raymond H. Myers, Sharon L. Myers, Keying
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