Question: A Si MOSFET has the following parameters: n + poly gate, oxide thickness d = 8 0 , Nd = 1 0 1 7 cm

A Si MOSFET has the following parameters: n+ poly gate, oxide thickness d=80, Nd=1017 cm-3, and Qi=5x1010 cm-2.(a) What is the threshold voltage (VT) of this MOSFET? Is this enhancement or depletion mode device? (b) What type of implant and dose are required to achieve VT=0?

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