A Si pn-junetion has a cross seetional area of 1x10 c, at 300xa forward bias voltage...

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A Si pn-junetion has a cross seetional area of 1x10 c, at 300xa forward bias voltage of 4v results in 1.5x10t cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pe, then the hole current at a penetration depth of 5 um in the neutral n-region will be: O 5460e-5 A O s894e 6 A O 1.66Se 8 A O 2574e 6 A O 1800A6 A A Si pn-junetion has a cross seetional area of 1x10 c, at 300xa forward bias voltage of 4v results in 1.5x10t cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pe, then the hole current at a penetration depth of 5 um in the neutral n-region will be: O 5460e-5 A O s894e 6 A O 1.66Se 8 A O 2574e 6 A O 1800A6 A