A silicon semiconductor material at T$=300$K is doped with arsenic atoms to a concentration of$2$x$1015$ cm$-3$ and with boron atoms to a concentration of $1\mathrm{.}2$x$1015$ cm$-3.($a$)$ Is the material n type orp type? $($b$)$ Determine n$0$ and p$0.($c$)$ Additional boron atoms are to be added such that the holeconcentration is $4$x$1015$ cm$-3.$ What concentration of boron atoms must be added and what is thenew value of n$0?$