Question: An n -poly-Si/SiO2/Si capacitor is made on p-type Si substrate with doping concentration of 1016cm-3 . Assume Qi =1011qC/cm2 . The SiO2 thickness is 500.
An n -poly-Si/SiO2/Si capacitor is made on p-type Si substrate with doping concentration of 1016cm-3 . Assume Qi =1011qC/cm2 . The SiO2 thickness is 500. Calculate metal/semiconductor work function difference ms (do not read from figure in the text, do the calculation by yourself), flat band voltage VFB, and threshold voltage VT
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